Thermal route for chemical modification and photoluminescence stabilization of porous silicon

This paper. describes photoluminescence (PL) stabilization through chemical modification of freshly prepared porous silicon (PSi) surfaces. As-anodize d PSi surfaces react with l-alkenes, non-conjugated dienes and aldehydes at elevated temperatures to form organic monolayers covalently bonded to the surface. This thermal route is very general and tolerant of different funct ional groups. We have characterized these organic monolayers using diffuse reflectance infrared Fourier-transform (DRIFT), Auger and Raman spectroscop ies. The PL intensity and peal; energy of the as-anodized PSi is not affect ed by the chemical functionalization. Aging these derivatized PSi samples i n ambient air has I-io effect on the FL. In fact, it is completely preserve d even when they are steam treated for six weeks at 70 degreesC and 100% hu midity. This treatment completely destroys the structural integrity of H-te rminated PSi.