Studies of thermally-carbonize porous silicon surfaces

Authors
Salonen, J Lehto, VP Bjorkqvist, M Laine, E Niinisto, L
Citation
J. Salonen et al., Studies of thermally-carbonize porous silicon surfaces, PHYS ST S-A, 182(1), 2000, pp. 123-126
Citations number
6
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
182
Issue
1
Year of publication
2000
Pages
123 - 126
Database
ISI
SICI code
0031-8965(200011)182:1<123:SOTPSS>2.0.ZU;2-7
Abstract
Thermally-carbonized porous silicon films have been prepared by exploiting the dissociation of acetylene. Thermoanalytical methods have been used to s tudy the oxidation behavior of these films in different oxidizing ambients, The results have been compared to other stabilization methods. Due to enha nced adsorption and only slightly reduced specific surface area, the carbon ization of porous silicon was found to be an attractive treatment for sensi ng applications. The possible pnsttreatments are also discussed.