Defect structure of nitrogen plasma treated porous silicon studied using electron paramagnetic resonance

Authors
Citation
T. Ehara et T. Arai, Defect structure of nitrogen plasma treated porous silicon studied using electron paramagnetic resonance, PHYS ST S-A, 182(1), 2000, pp. 127-131
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
182
Issue
1
Year of publication
2000
Pages
127 - 131
Database
ISI
SICI code
0031-8965(200011)182:1<127:DSONPT>2.0.ZU;2-H
Abstract
We describe the defect properties in nitrogen plasma treated porous silicon (PS) studied using electron paramagnetic resonance (EPR). We consider the dependence of the paramagnetic properties of the defects on the structure o f PS. The nitrogen plasma treatment changed the structure of PS. After the plasma treatment, new crystalline grains are formed in the FS layer by the energy of plasma. The EPR spectra have changed with the structural change. The width of the dangling bond defect (DB) signal increased. because of the contribution of a new defect signal at the grain boundary of a new silicon grain.