T. Ehara et T. Arai, Defect structure of nitrogen plasma treated porous silicon studied using electron paramagnetic resonance, PHYS ST S-A, 182(1), 2000, pp. 127-131
We describe the defect properties in nitrogen plasma treated porous silicon
(PS) studied using electron paramagnetic resonance (EPR). We consider the
dependence of the paramagnetic properties of the defects on the structure o
f PS. The nitrogen plasma treatment changed the structure of PS. After the
plasma treatment, new crystalline grains are formed in the FS layer by the
energy of plasma. The EPR spectra have changed with the structural change.
The width of the dangling bond defect (DB) signal increased. because of the
contribution of a new defect signal at the grain boundary of a new silicon
grain.