Rapid thermal treatment of porous Si in nitrogen atmosphere has been perfor
med to investigate the origin of the visible photoluminescence, and to stab
ilize the luminescence intensity of porous Si. After the rapid thermal trea
tment of as-anodized porous Si, the peak energy of PL spectrum of the rapid
thermal treated poll,us Si shifts from 1.9 eV (red band) to 2.23 eV (green
band), and no degradation of the peak intensity at 2.23 eV is observed. In
frared absorption measurements reveal that hydrogen is almost completely re
moved from the porous layer. It is also shown by X-ray photoelectron spectr
oscopy measurements that nitrogen is incorporated into the porous layer for
ming Si-N and N-O bonds. Raman spectroscopy measurements show that the rapi
d thermal annealing leads to a wide distribution in the size of nanocrystal
line Si, which is supposed to be the cause of the broad green band.