A strong dependence of the electrical conductivity of mesoporous Si (meso-P
S) on the dielectric constant of ambient surrounding Si nanocrystallites ha
s been shown by current-voltage and photovoltage measurements. A sharp incr
ease of free carrier concentration in a meso-PS layer filled by polar liqui
ds with high dielectric constants has been found. The observed phenomenon i
s explained by activation of impurities (boron atoms) due to the decrease o
f binding energy of carriers trapped by the impurity potential.