Optoelectronic characterisation of porous silicon/CdS and ZnS systems

Ultra thin films of CdS and ZnS were deposited on porous silicon by using t he liquid-liquid interface reaction technique (LLIRT) which was similar to the Langmuir. Blodgett method. The photo luminescence (PL) intensity after deposition of CdS and ZnS was observed to increase by more than two factors and was associated With a blue shift. Junction I-V characteristics were st udied for various thicknesses of the deposited films. The rectifiying behav iour of I-V characteristics indicates the formation of junctions with porou s silicon, nail measurements were used to estimate the extrinsic properties of the overlayers as well as those of porous silicon. The change in the I- V characteristics after annealing of the deposited samples is also reported .