Growth of GaN films on porous silicon by MOVPE

In this work, we report on the growth or GaN films on Porous Silicon (PS) s ubstrates by the Metal-organic Vapour Phase Epitaxy (MOVPE) technique. The growth of GaN has been controlled by in-situ laser reflectometry. The growt h rate was found to depend on growth temperature. X-ray Diffraction (XRD) p atterns show that the epitaxial films correspond to that of GaN. The morpho logy and density or the nano-scale GaN layers were dettrrmined by atomic fo rce microscopy (AFM) measurements. These first results show that PS is a pr omising candidate for obtaining GaN films.