Porous silicon: A buffer layer for PbS heteroepitaxy

Authors
Yakovtseva, V Vorozov, N Dolgyi, L Levchenko, V Postnova, L Balucani, M Bondarenko, V Lamedica, G Ferrara, V Ferrari, A
Citation
V. Yakovtseva et al., Porous silicon: A buffer layer for PbS heteroepitaxy, PHYS ST S-A, 182(1), 2000, pp. 195-199
Citations number
10
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
182
Issue
1
Year of publication
2000
Pages
195 - 199
Database
ISI
SICI code
0031-8965(200011)182:1<195:PSABLF>2.0.ZU;2-8
Abstract
In the present work, we report on the heteroepitaxial growth of PbS on poro us silicon (PS). Epitaxial PbS films were grown by MBE on the surface of PS formed on the n(+)-type silicon (111) substrate. The Films were comparable with films grown on BaF2 substrates. Beneficial influence of a PS buffer l ayer on the structure and properties of PbS epitaxial films was supported b y implementation of sensitive Schottky-harrier photodiodes fabricated in th ese films.