Oxidation-induced modifications of trap parameters in nanocrystalline porous silicon

Authors
Draghici, M Miu, M Iancu, V Nassiopoulou, A Kleps, I Angelescu, A Ciurea, ML
Citation
M. Draghici et al., Oxidation-induced modifications of trap parameters in nanocrystalline porous silicon, PHYS ST S-A, 182(1), 2000, pp. 239-243
Citations number
22
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
182
Issue
1
Year of publication
2000
Pages
239 - 243
Database
ISI
SICI code
0031-8965(200011)182:1<239:OMOTPI>2.0.ZU;2-X
Abstract
The changes produced by anodic and natural oxidation upon the trap paramete rs in nanocrystalline porous silicon were compared. To put them in evidence , we used optical charging spectroscopy The same trapping It levels (with t he same activation energies) were observed after both oxidation processes. In comparison with flesh samples, a new trapping level (the deepest one) ap pears and the concentrations of the surface traps strongly diminish.