TDS applied to investigate the hydrogen and silane desorption from porous silicon

Authors
Martin, P Fernandez, JF Sanchez, CR
Citation
P. Martin et al., TDS applied to investigate the hydrogen and silane desorption from porous silicon, PHYS ST S-A, 182(1), 2000, pp. 255-260
Citations number
20
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
182
Issue
1
Year of publication
2000
Pages
255 - 260
Database
ISI
SICI code
0031-8965(200011)182:1<255:TATITH>2.0.ZU;2-F
Abstract
Hydrogen and silane desorption from n-type porous silicon samples, prepared by electrochemical etching, has been investigated by Thermal Desorption Sp ectroscopy (TDS). Desorption rates were monitored by a quadrupole mass spec trometer (QMS) during linear heating of the samples. Two peaks have been fo und in the hydrogen desorption spectra a related to H-2 desorption from dro p Si-H and =Si=2H configurations, respectively. Activation energies for hyd rogen and silane desorption have been measured by using the heating rate va riation method.