From undulating Si quantum wires to Si quantum dots: A model for porous silicon

Citation
E. Degoli et al., From undulating Si quantum wires to Si quantum dots: A model for porous silicon, PHYS ST S-A, 182(1), 2000, pp. 301-306
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
182
Issue
1
Year of publication
2000
Pages
301 - 306
Database
ISI
SICI code
0031-8965(200011)182:1<301:FUSQWT>2.0.ZU;2-#
Abstract
Freshly etched porous silicon shows the structure of a crystalline silicon skeleton with a connected undulating-wire morphology; in aged porous silico n samples the presence of Si dots is predominant. In this paper we present, for the first time, ab-initio results of the electronic and optical proper ties of undulating Si quantum wires, moreover, the transition from Si quant um wires to Si quantum dots is also discussed.