Dielectric effects in the photoluminescence from porous silicon

Citation
J. Diener et al., Dielectric effects in the photoluminescence from porous silicon, PHYS ST S-A, 182(1), 2000, pp. 341-345
Citations number
11
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
182
Issue
1
Year of publication
2000
Pages
341 - 345
Database
ISI
SICI code
0031-8965(200011)182:1<341:DEITPF>2.0.ZU;2-D
Abstract
Polarization dependent photoluminescence (PL), time-resolved PL and PL exci tation experiments are performed in order to clarify the origin of the line ar polarization of the PL of porous silicon excited by lineally polarized l ight. It is shown that this effect, when PL is excited significantly above the detection energy, is not related to a coherent exciton alignment or sel ective optical excitation of those nanocrystals whose transition dipole mom ents are oriented parallel to the polarization vector of the exciting light . The experimental results are interpreted in the framework of a dielectric model assuming aspheric nanocrystals.