Doping of porous silicon with terbium organic complex

Citation
Jx. Meng et al., Doping of porous silicon with terbium organic complex, PHYS ST S-A, 182(1), 2000, pp. 363-366
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
182
Issue
1
Year of publication
2000
Pages
363 - 366
Database
ISI
SICI code
0031-8965(200011)182:1<363:DOPSWT>2.0.ZU;2-X
Abstract
A simple but effective doping method to introduce functional organic molecu les and metal ions into porous silicon with relatively simple organic compl exes was developed. After porous silicon was doped with a Tb-sulfosalicylic complex, it emits bright green emission when excited with UV light. The ph otoluminescence (FL) spectrum shows that only Tb3+ ions emit efficiently wh ile the luminescence of porous silicon and organic ligands is almost thorou ghly quenched. Based on the Fourier transform infrared and PL measurements, it is proposed that Tb3+ complex was physically adsorbed into pores of por ous silicon.