Analysis of the shape of PL spectra and its temperature dependence in self-supporting porous silicon

In this paper, the systematic change in the shape of the photoluminescence (PL) spectra with the change in the growth parameters for sell-supporting p orous silicon (PS) has been reported and mathematically analyzed. The confi nement energy was found to be less than that in the case of non-self-suppor ting PS. The PL behavior is attributed to the quantum size effect. Also, a study of thr: temperature variation of PL For two of these samples was perf ormed. The luminescence data can be explained in terms of a competition bet ween an activated radiative process and a Berthlot-type hopping process.