Fabrication and characterization of a sensing device based on porous silicon

Citation
L. Quercia et al., Fabrication and characterization of a sensing device based on porous silicon, PHYS ST S-A, 182(1), 2000, pp. 473-477
Citations number
8
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
00318965 → ACNP
Volume
182
Issue
1
Year of publication
2000
Pages
473 - 477
Database
ISI
SICI code
0031-8965(200011)182:1<473:FACOAS>2.0.ZU;2-8
Abstract
In this work we have fabricated a simple gas-sensing device based on porous silicon. Starting from the well-known porous silicon photoluminescence que nching due to oxygen, we have optimized the material and the device design, obtaining a reversible and stable O-2 gas sensor. A simple and cheap detec tor of;iir leaks in inert environment is of great interest for the alimenta ry industry. Full characterization of the device has been carried out in a gas sensor calibration apparatus, showing even a promising sensitivity at r oom temperature to a toxic gas like NO2.