Current-induced optical effect in porous silicon Fabry-Perot resonators

The refractive index of porous silicon (PS) was changed by electrical injec ted carriers in PS-based Fabry-Perot resonator (PS-FPR) diodes. According t o measurements of time evolution, there are fast (millisecond order) and sl ow (several seconds or der) components in the refractive: index change. Thi s phenomenon can be well explained by a theoretical estimation based on a m odel of carrier injection and subsequent accumulation. The maximum value of the relative refractive index change is about 0.1% at a diode current dens ity of 40 mA/cm(2). These results indicate further technological potential of FS fur silicon-based opto-electronic devices.