Secondary-electron emission by 0.5-MeV/u H, He, and Li ions specularly reflected from a SnTe(001) surface: Possibility of the surface track potentialreducing the secondary-electron yield at a semiconductor surface - art. no. 062902

We have measured secondary-electron (SE) yield gamma induced by 0.5 MeV/u H , He, and Li ions specularly reflected from a SnTe(001) surface. The positi on-dependent SE production rate is derived from the observed gamma. The SE production rate normalized by the observed mean square charge of the reflec ted ions is almost independent of the atomic number of the projectile ion. This indicates that the surface track potential induced by the projectile i on is negligibly small to affect the SE emission at semiconductor surfaces probably due to rapid relaxation processes.