Simulation of Ta2O5-gate ISFET temperature characteristics

The simulated response of an ion-sensitive field-effect transistor (ISFET) with a tantalum pentoxide-gate (Ta2O5-gate) insulator is introduced in this paper. This simulation is based on the site-binding model and is designed for an ISFET working in a constant charge mode. Here, the temperature chara cteristics of Ta2O5-gate ISFET were theoretically studied. First, the Stern Electrical Double Layer Model was used to induce the pK(a) and pK(b) of Ta 2O5 values. Secondly, the temperature coefficient was calculated to draw th e related curve of the different temperature parameters using the pK(a) and pK(b) values and the ISFET behaviors. ISFETs were predicted under differen t temperatures. (C) 2000 Elsevier Science B.V. All rights reserved.