Rg. Barnes et al., HYDROGEN HOPPING RATES AND THE ORDER-DISORDER TRANSITIONS IN SUB-STOICHIOMETRIC LANTHANUM TRIHYDRIDE, Journal of alloys and compounds, 253, 1997, pp. 445-448
Extensive measurements of proton magnetic resonance lineshapes and spi
n-lattice relaxation rates in sub-stoichiometric lanthanum trihydrides
, prepared from highest purity La metal, furnish clear evidence for th
e coexistence of ordered and disordered hydrogen sublattices over an e
xtended temperature range terminating with the onset of semiconducting
behavior. This phenomenon persists even at the stoichiometric limit,
LaH3. Analysis of resonance lineshape intensities yields H-t=0.080+/-0
.020 eV for the enthalpy of the order-disorder transition in LaH2.99,
and analysis of intensities in relaxation rate measurements yields H-t
=0.066+/-0.020 eV for this enthalpy in LaH2.90. A second, higher tempe
rature transition in the hydrogen hopping rate appears to coincide wit
h the onset of semiconducting behavior.