Photoluminescence of porous silicon layers formed in ion-implanted siliconwafers

Authors
Piryatinskii, YP Klyui, NI Rozhin, AG
Citation
Yp. Piryatinskii et al., Photoluminescence of porous silicon layers formed in ion-implanted siliconwafers, TECH PHYS L, 26(11), 2000, pp. 944-946
Citations number
14
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
TECHNICAL PHYSICS LETTERS
ISSN journal
10637850 → ACNP
Volume
26
Issue
11
Year of publication
2000
Pages
944 - 946
Database
ISI
SICI code
1063-7850(200011)26:11<944:POPSLF>2.0.ZU;2-7
Abstract
Implantation of the B+ and N+ ions or a B+ + N+ combination into silicon su bstrates affects the photoluminescence properties of porous silicon (por-Si ) layers prepared on the ion-modified wafers. The postimplantation anneals lead to significant changes in the per-Si emission bands. Models explaining the observed phenomena are suggested. (C) 2000 MAIK "Nauka/Interperiodica" .