Study on the adsorption mechanism of gaseous molecules on surface of semiconductor by photovoltaic method

Authors
Yan, YM Sun, YY Ding, XY Chen, YM
Citation
Ym. Yan et al., Study on the adsorption mechanism of gaseous molecules on surface of semiconductor by photovoltaic method, ACT PHY C E, 49(12), 2000, pp. 2448-2454
Citations number
14
Categorie Soggetti
Physics
Journal title
ACTA PHYSICA SINICA
ISSN journal
10003290 → ACNP
Volume
49
Issue
12
Year of publication
2000
Pages
2448 - 2454
Database
ISI
SICI code
1000-3290(200012)49:12<2448:SOTAMO>2.0.ZU;2-0
Abstract
The relative surface parameters were determined by photovoltaic method in p and n type silicon in a wafer under the atmospheric, oxygenic, and nitric environments, respectively. The inherent mechanism is approached according to the parameter variations, and the relative physical phenomena are explai ned.