Performance and design of InGaAs/InP photodiodes for single-photon counting at 1.55 mu m

Authors
Hiskett, PA Buller, GS Loudon, AY Smith, JM Gontijo, I Walker, AC Townsend, PD Robertson, MJ
Citation
Pa. Hiskett et al., Performance and design of InGaAs/InP photodiodes for single-photon counting at 1.55 mu m, APPL OPTICS, 39(36), 2000, pp. 6818-6829
Citations number
38
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Optics & Acoustics
Journal title
APPLIED OPTICS
ISSN journal
00036935 → ACNP
Volume
39
Issue
36
Year of publication
2000
Pages
6818 - 6829
Database
ISI
SICI code
0003-6935(200012)39:36<6818:PADOIP>2.0.ZU;2-S
Abstract
The performance of selected, commercially available InGaAs/InP avalanche ph otodiodes operating in a photon-counting mode at an incident wavelength of 1.55 mum is described. A discussion on the optimum operating conditions and their relationship to the electric field distribution within the device is presented. (C) 2000 Optical Society of America OCIS codes: 230.0040, 230.5 170, 230.5160, 270.5290.