In-plane anisotropic lasing characteristics of (110)-oriented GaInAsP quantum-well lasers

(110)-oriented GaInAsP quantum-well (QW) lasers have been fabricated to inv estigate growth direction effects of the QW structure on laser performance. Large in-plane anisotropic threshold current densities in the lasers were observed between the [001] and [1 (1) over bar0] cavity directions of the ( 110)-oriented QW structure lasers. This large anisotropy is able to be ascr ibed to a stronger oscillator strength for [1 (1) over bar0]-polarized ligh t. Fairly low threshold current densities of less than 0.6 kA/cm(2) were ob tained for the lasers with cavities along [001] direction in spite of the l ower reflectivity of the reactive ion etching etched mirror surface. (C) 20 00 American Institute of Physics. [S0003-6951(01)01801-0].