Spectroscopy of competing mechanisms generating stimulated emission in gallium nitride

Authors
Herzog, WD Bunea, GE Unlu, MS Goldberg, BB Molnar, RJ
Citation
Wd. Herzog et al., Spectroscopy of competing mechanisms generating stimulated emission in gallium nitride, APPL PHYS L, 77(25), 2000, pp. 4145-4147
Citations number
17
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
25
Year of publication
2000
Pages
4145 - 4147
Database
ISI
SICI code
0003-6951(200012)77:25<4145:SOCMGS>2.0.ZU;2-J
Abstract
Two competing recombination mechanisms of stimulated emission in the vicini ty of 145 K have been directly observed in the temperature dependence of th e optical emission spectra for high-quality, unintentionally doped gallium nitride. Our analysis of the spectra indicates that exciton-exciton scatter ing is responsible for stimulated emission below 145 K, while at higher tem peratures an electron-hole plasma becomes the dominant mechanism. (C) 2000 American Institute of Physics. [S0003- 6951(00)02051-9].