Strain-induced diffusion in a strained Si1-xGex/Si heterostructure

Diffusivity of a strained heterostructure was theoretically investigated, a nd general diffusion equations with strain potential were deduced. There wa s an additional diffusivity by the strain potential gradient as well as by the concentration gradient. The strain-induced diffusivity was a function o f concentration, and its temperature dependence was formulated. The activat ion energy of the strain-induced diffusivity was measured by high-resolutio n transmission electron microscopy. This result can be generally applied fo r the investigation of the diffusion in strained heterostructures. (C) 2000 American Institute of Physics. [S0003- 6951(00)02247-6].