This letter addresses the effect of generation of confined LO phonons by dr
ifting electrons in quantum wells. We have derived a general formula for th
e phonon increment as a function of phonon wave vector, electron drift velo
city, and structure parameters. Numerical estimates of the phonon increment
and the phonon lifetimes have shown that AlAs/GaAs/AlAs and GaSb/InSb/GaSb
quantum well structures can demonstrate the effect of coherent LO phonon g
eneration by the electric current. (C) 2000 American Institute of Physics.
[S0003-6951(00)03152-1].