The binding sites and diffusion pathways of Si adatoms on a c(4x2) reconstr
ucted Si(001) surface are investigated by a tight-binding method with an en
vironment-dependent silicon potential in conjunction with ab initio calcula
tions using the Car-Parrinello method. A new diffusion pathway along the tr
ough edge driven by dimer flipping is found with a barrier of 0.74 eV, comp
arable to that of 0.68 eV along the top of the dimer rows. (C) 2000 America
n Institute of Physics. [S0003-6951(01)03401-5].