We developed a membrane structure with a silicon-on-insulator (SOI) wafer b
y using a micromachining technique to create a transition edge x-ray sensor
. In this membrane structure, the part of the SOI layer between the silicon
nitride (SiNx) film and the buried oxide layer was etched from the front s
ide to form the SiNx membrane. Advantages of this membrane are that (a) it
is stronger than conventional membranes and is therefore suitable for large
format arrays, (b) the Si etching time is reduced from 12 h (for conventio
nal etching) to 4 h, and (c) all the fabrication processes are done from th
e front of the wafer, thus simplifying the manufacturing process. (C) 2000
American Institute of Physics. [S0003-6951(00)01151-7].