Strong, easy-to-manufacture, transition edge x-ray sensor

We developed a membrane structure with a silicon-on-insulator (SOI) wafer b y using a micromachining technique to create a transition edge x-ray sensor . In this membrane structure, the part of the SOI layer between the silicon nitride (SiNx) film and the buried oxide layer was etched from the front s ide to form the SiNx membrane. Advantages of this membrane are that (a) it is stronger than conventional membranes and is therefore suitable for large format arrays, (b) the Si etching time is reduced from 12 h (for conventio nal etching) to 4 h, and (c) all the fabrication processes are done from th e front of the wafer, thus simplifying the manufacturing process. (C) 2000 American Institute of Physics. [S0003-6951(00)01151-7].