Biexciton emission from high-quality ZnO films grown on epitaxial GaN by plasma-assisted molecular-beam epitaxy (vol 77, pg 537, 2000)

Authors
Ko, HJ Chen, YF Yao, T Miyajima, H Yamamoto, A Goto, T
Citation
Hj. Ko et al., Biexciton emission from high-quality ZnO films grown on epitaxial GaN by plasma-assisted molecular-beam epitaxy (vol 77, pg 537, 2000), APPL PHYS L, 77(25), 2000, pp. 4226-4226
Citations number
1
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
00036951 → ACNP
Volume
77
Issue
25
Year of publication
2000
Pages
4226 - 4226
Database
ISI
SICI code
0003-6951(200012)77:25<4226:BEFHZF>2.0.ZU;2-S