Metalorganic vapour phase epitaxy growth of InP-based heterojunction bipolar transistors with carbon doped InGaAs base using tertiarybutylarsine and tertiarybutylphosphine in N-2 ambient

A process for growth of heterostructure bipolar transistors (HBT) using ter tiarybutylarsine (TBA) and tertiarybutylphosphine (TBP) in N-2 ambient is r ealised, which is compatible with a high temperature overgrowth, thus suita ble for the vertical integration Of a laser structure on top of an HBT. A h igh growth temperature for the C-InGaAs base is favourable, to ensure no: d egradation during subsequent growth. Increasing the growth temperature afte r the base from 500 degreesC to 680 degreesC within the emitter layer inste ad of at the base-emitter interface was found to improve the ideality facto rs, the de gain and the turn-on voltage.