Fabrication of nanoscale cubic SiC particle film

Nanoscale cubic SIC particle film is grown on Si substrate by hydrogen plas ma sputtering of a SiC target. Before the film growth-an amorphous SiC buff er layer of about 100 nm thickness is prepared on the Si substrate. By anne aling the buffer layer in hydrogen atmosphere, the nanoscale cubic SiC part icle film can be grown on the buffer layer on Si. Particle size, compositio n and crystallinity of the film depend on the composition, the crystallinit y and the surface morphology of the buffer layer.