Electrical characterization of low nitrogen content plasma deposited and rapid thermal annealed Al/SiNx : H/InP metal-insulator-semiconductor structures

The influence of the dielectric composition and post deposition rapid therm al annealing (RTA) treatments on the electrical characteristics of low nitr ogen content plasma-deposited Al/SiNx:H/InP structures were analyzed. To ob tain the interface state density, deep level transient spectroscopy (DLTS) measurements were carried out. We have also evaluated the insulator damage density, the so-called disorder-induced gap states (DIGS), by means of cond uctance transient analysis. As for the dielectric composition, both the x = 0.97 and x = 1.43 values provide interfacial state density and DIGS damage values of the same order of magnitude. In the x = 0.97 case, RTA treatment s reduce the insulator damage moving it towards the interface. In the x = 1 .43 case this behavior is only observed for RTA temperatures lower than 500 degreesC. So, moderate temperature (<500<degrees>C) RTA treatments improve DIGS damage. This is an important result in terms of fabricating bi-layere d metal-insulator-semiconductor (MIS) structures that not only have good-qu ality interfaces, but also good dielectric properties.