Photoluminescence of CdSnP2 single crystals in the vicinity of the fundamental optical edge

The influence of chemical etching on the emission properties of undoped CdS nP2 crystals has been studied. The appropriate treatment gives rise to inte gral strengthening of photoluminescence and redistribution of emissions in such a manner that the longest wavelength band disappears and the exciton l ine flames up. The shortest wavelength line at 1.243 eV with the 2kT half-w idth has been observed successfully for the first time. The doubler structu re observed near the fundamental optical edge was attributed to the free ex citon and bound-to-shallow level state in CdSnP2.