Structures and ferroelectric natures of epitaxially grown vinylidene fluoride oligomer thin films

Citation
K. Noda et al., Structures and ferroelectric natures of epitaxially grown vinylidene fluoride oligomer thin films, JPN J A P 1, 39(11), 2000, pp. 6358-6363
Citations number
24
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
39
Issue
11
Year of publication
2000
Pages
6358 - 6363
Database
ISI
SICI code
Abstract
Structural and electrical properties of newly synthesized vinylidene fluori de (VDF) oligomer thin film have been investigated. The FTIR Spectrum showe d that the epitaxially grown film on KBr(001) substrate consists of form I (beta phase) crystals and their c axes (molecular axes) and b axes (polar a xes) are arranged parallel to the KBr substrate. To make electrical measure ments possible, this film was transferred onto a gold bottom electrode with out causing any changes in the crystalline structures. By using a modified atomic force microscope, we succeeded in the formation of local polarized d omains as well as the clear observation of piezoresponse hysteresis curves in this sample. The coercive field and piezoelectric coefficient (d(33)) fo r the 37-nm-thick film were about 200 MV/m and -3 pm/V, respectively. It wa s suggested that the b axis in the as-grown film rotated from the parallel to the perpendicular direction to the film surface during the poling proces s. This study reveals the ferroelectric characteristics in the VDF oligomer thin films for the first time.