Electrochemical method for evaluation of structural perfection of hydrogen-terminated Si(111) surface

Authors
Bensliman, F Aggour, M Ennaoui, A Matsumura, M
Citation
F. Bensliman et al., Electrochemical method for evaluation of structural perfection of hydrogen-terminated Si(111) surface, JPN J A P 2, 39(12A), 2000, pp. L1206-L1208
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
39
Issue
12A
Year of publication
2000
Pages
L1206 - L1208
Database
ISI
SICI code
Abstract
In this study, we measured the electrochemical oxidation currents on n-Si(1 11) surfaces at a potential near the flat-band potential. The current becam e small when the surface was treated with oxygen-free water, which is effec tive for Battening the Si(111) surface, before the electrochemical measurem ent. This current was attributed to the oxidation of Si atoms on step and k ink sites, and was concluded to be a good measure of the structural perfect ion of Si(111) surfaces.