Growth of AlInN on (111)GaAs substrates

Authors
Guo, QX Okada, A Kidera, H Nishio, M Ogawa, H
Citation
Qx. Guo et al., Growth of AlInN on (111)GaAs substrates, JPN J A P 2, 39(11B), 2000, pp. L1143-L1145
Citations number
15
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
39
Issue
11B
Year of publication
2000
Pages
L1143 - L1145
Database
ISI
SICI code
Abstract
Ternary AlInN is grown on (111)GaAs substrates by reactive radio-frequency magnetron sputtering using aluminum and indium targets in an ambient of arg on and nitrogen. Highly c-axis-oriented films with a wurtzite structure are obtained. It is revealed that the composition of AlInN layers can be contr olled by changing the ratio of the sputtered area of the aluminum plate to that of the indium plate.