Growth of epitaxial ZnO thin film by oxidation of epitaxial ZnS film on Si(111) substrate

The growth of an epitaxial ZnO thin film on a Si substrate by oxidation of an epitaxial ZnS him is a novel method and we are reporting it for the firs t time. The merits of using the Si substrate are to make the driving voltag e of light-emitting diodes (LEDs) lower and the cost of the LEDs less expen sive than that using a sapphire substrate. In this study, the epitaxial ZnO thin film could be successfully grown on the Si substrate. The epitaxial f ilms showed a strong near-ultraviolet emission with a peak at around 3.32 e V at room temperature under 325 nm excitation.