Properties of ruthenium films prepared by liquid source metalorganic chemical vapor deposition using Ru(EtCp)(2) with tetrahydrofuran solvent

Pure Ru thin films were deposited on SiO2/Si substrates, using Ru(C2H5C5H4) (2) with C4H5O (THF) solvent, by liquid source metalorganic chemical vapor deposition. The Ru single phase could be obtained under all growth conditio ns. For temperatures below 350 degreesC, deposition occurred in the surface reaction region because the kinetics increased exponentially as a function of the deposition temperature with an activation energy of about 1.1 eV. A bove 350 degreesC, the deposition was controlled by the mass transport proc ess. Step coverage for the Ru thin films deposited at 300-325 degreesC with an aspect ratio of 3.3 was about 100%. The Ru thin films grown at 325 degr eesC showed a dense and smooth microstructure and had resistivities of < 10 0 mu Omega .cm.