Atomistic simulation of stacking fault tetrahedra formation in Cu

Atomistic simulations based on the embedded atom method (EAM) are used to m odel the formation of stacking fault tetrahedra (SFT) in face centered cubi c (fcc) Cu. SFTs are observed in fee metals following both irradiation and plastic deformation and have significant impact on defect accumulation and microstructural evolution of the irradiated material. Many authors have pro posed SFT formation mechanisms; :however, a concise atomistic view is lacki ng. Starting from the vacancy-rich regions produced in high-energy displace ment cascades, we have performed molecular dynamics (MD) simulations at a r ange of temperatures and observed SFT formation. In this work, we provide a n atomistic picture of SFT formation. (C) 2000 Elsevier Science B.V. All ri ghts reserved.