An initial model for the RIED effect

Citation
Er. Hodgson et A. Morono, An initial model for the RIED effect, J NUCL MAT, 283, 2000, pp. 880-884
Citations number
21
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Nuclear Emgineering
Journal title
JOURNAL OF NUCLEAR MATERIALS
ISSN journal
00223115 → ACNP
Volume
283
Year of publication
2000
Part
B
Pages
880 - 884
Database
ISI
SICI code
0022-3115(200012)283:<880:AIMFTR>2.0.ZU;2-S
Abstract
A simple model based on electron acceleration in the conduction band giving rise to an increased F+ oxygen vacancy lifetime provides an explanation fo r several radiation induced electrical degradation (RIED) associated observ ations in Al2O3. The increased F+ radioluminescence noted during RIED is a direct consequence of the lifetime increase. The model predicts the observe d electric field threshold for RIED, and an increase in the field threshold with increasing impurity content. RIED for RF electric fields is also expl ained. In addition the lifetime increase provides an explanation for the en hanced oxygen vacancy aggregation including colloid and gamma alumina produ ction observed under RIED conditions. (C) 2000 Elsevier Science B.V. All ri ghts reserved.