The metal-insulator transition in icosahedral AlPdRe thin films

Authors
Rosenbaum, R Haberkern, P Haussler, P Palm, E Murphy, T Hannahs, S Brandt, B
Citation
R. Rosenbaum et al., The metal-insulator transition in icosahedral AlPdRe thin films, J PHYS-COND, 12(47), 2000, pp. 9735-9749
Citations number
52
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF PHYSICS-CONDENSED MATTER
ISSN journal
09538984 → ACNP
Volume
12
Issue
47
Year of publication
2000
Pages
9735 - 9749
Database
ISI
SICI code
0953-8984(20001127)12:47<9735:TMTIIA>2.0.ZU;2-Z
Abstract
Thin 2200 Angstrom icosahedral films with compositions near Al72Pd20Re8 hav e been fabricated on quartz glass substrates. Some of the films exhibited i nsulating transport properties down to 0.07 K where their resistivities fol lowed an activated 'Mott' variable-range hopping law. Other films exhibited metallic transport properties. In addition, the precursor amorphous AlPdRe films were observed to make superconducting transitions below 0.6 K; thus the amorphous and icosahedral structures exhibit contrasting metallic and i nsulating transport behaviours.