Temperature dependence of the electron-phonon scattering time of charge carriers in p-Si/SiGe heterojunctions

Authors
Andrievskii, VV Berkutov, IB Komnik, YF Mironov, OA Whall, TE
Citation
Vv. Andrievskii et al., Temperature dependence of the electron-phonon scattering time of charge carriers in p-Si/SiGe heterojunctions, LOW TEMP PH, 26(12), 2000, pp. 890-893
Citations number
37
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
LOW TEMPERATURE PHYSICS
ISSN journal
1063777X → ACNP
Volume
26
Issue
12
Year of publication
2000
Pages
890 - 893
Database
ISI
SICI code
1063-777X(200012)26:12<890:TDOTES>2.0.ZU;2-3
Abstract
Si/Si0.64Ge0.36 heterojunctions with p-type conductivity exhibit an electro n overheating effect. An analysis of the damping of the amplitudes of the S hubnikov-de Haas oscillations upon a change in temperature and applied elec tric field yields the temperature dependence of the electron-phonon relaxat ion time: t(eph)=10(-8)T(-2) s. (C) 2000 American Institute of Physics. [S1 063-777X(00)00512-0].