An improved technology of 6H-SiC power diodes

Authors
Badila, M Brezeanu, G Dilimot, G Millan, J Godignon, P Chante, JP Locatelli, ML Mestres, N Lebedev, A
Citation
M. Badila et al., An improved technology of 6H-SiC power diodes, MICROELEC J, 31(11-12), 2000, pp. 955-962
Citations number
8
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS JOURNAL
ISSN journal
00262692 → ACNP
Volume
31
Issue
11-12
Year of publication
2000
Pages
955 - 962
Database
ISI
SICI code
0026-2692(200011/12)31:11-12<955:AITO6P>2.0.ZU;2-7
Abstract
A refined technology of SiC p-n junctions is proposed. Usage of boron to co mpensate the high doping of n layers on structures with different continuou s areas is primarily experimentally demonstrated. A comparison between the electrical characteristics of boron compensated and uncompensated diodes is presented. Then a technology using cellular structure for 6H-SiC large are a p-n devices is designed and optimized. For these split area structures th e micropipes effect is avoided. Based on a matrix structure with 0.16 mm(2) cell area a medium power (600 V breakdown voltage and 1 A at forward volta ge of 5 V) p-n diode has been fabricated and tested. (C) 2000 Elsevier Scie nce Ltd. All rights reserved.