Numerical analysis of SOI LDMOS using a recessed source and a trench drain

A new SOI LDMOS using a recessed source and a trench drain was proposed to improve the on-characteristics at a given breakdown voltage. On-resistance and breakdown voltages of the proposed LDMOS are investigated by the two-di mensional simulator, MEDICI. The simulation results show that the on-resist ance of the proposed and the conventional LDMOS are 76.3 and 129.5 m Ohm mm (2), respectively. The on-resistance of the proposed LDMOS decreases by 41% compared to that of the conventional LDMOS at the same breakdown voltage o f 36.5 V. (C) 2000 Published by Elsevier Science Ltd.