Photofield emission from a tipped silicon photocathode in IR with a new picosecond Nd-YAG laser at a frequency of 100 MHz

Citation
A. Barthelemy et al., Photofield emission from a tipped silicon photocathode in IR with a new picosecond Nd-YAG laser at a frequency of 100 MHz, NUCL INST A, 455(2), 2000, pp. 405-411
Citations number
6
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
01689002 → ACNP
Volume
455
Issue
2
Year of publication
2000
Pages
405 - 411
Database
ISI
SICI code
0168-9002(200012)455:2<405:PEFATS>2.0.ZU;2-D
Abstract
Tipped silicon photocathodes are tested with the IR wavelength (1.064 mum) of a new lock-mode Nd-YAG laser. The impulse width of 30 ps is repeated at a frequency of 100 MHz at a power of 122 W. A quantum yield of 2.5 x 10(-3) is obtained in a DC gun using the best continuous emission field of 20 MV/ m for the photofield emission current. The ratio of the photofield emission current to the field emission current (dark current) is more than 10(4), A previous experiment with the second harmonic of a Nd-YAG at 10 Hz gave 700 pC per pulse of 35 ps width with a quantum yield of 10(-5) at the threshol d emission field of 7.5 MV/m. (C) 2000 Elsevier Science B.V. All rights res erved.