Coated conductor development by photo-assisted MOICVD growth of YBCO thickfilms and buffer layers

Authors
Ignatiev, A Chou, PC Chen, YM Zhang, X Tang, Z
Citation
A. Ignatiev et al., Coated conductor development by photo-assisted MOICVD growth of YBCO thickfilms and buffer layers, PHYSICA C, 341, 2000, pp. 2309-2313
Citations number
5
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA C
ISSN journal
09214534 → ACNP
Volume
341
Year of publication
2000
Part
4
Pages
2309 - 2313
Database
ISI
SICI code
0921-4534(200011)341:<2309:CCDBPM>2.0.ZU;2-8
Abstract
YBa2CU3O7-x films have been deposited by photo-assisted MOCVD at commercial ly viable rates on both single crystal oxide substrates and atomically text ured metallic substrates. CeO2 and YSZ buffer layers have also been develop ed by photo-assisted MOCVD for deposition on metallic substrates at rates a pproaching 1 mum/min. The resulting buffer layers show good duplicate of th e moderate atomic order of the underlying metallic substrates, and the subs equent YBCO layers show similar moderate atomic order with resulting J(c) s imilar to 5 x 10(5)A/cm(2).