Recently [1], we have shown that dislocations are the most important flux p
inning centers in Pulsed Laser Deposited YBa2Cu3O7-delta thin films. It app
eared that the magnetic field upto which the critical current remains const
ant, is roughly equal to the matching field B-Phi=n(disl)Phi (0), with n(di
sl) the density of dislocations. Here, we investigate the formation mechani
m of these dislocations. Using wet-chemical etching in combination with Ato
mic Force Microscopy, we find that dislocations are induced in the first st
ages of film growth and persist all the way up to the film surface parallel
to the c-axis. Since the substrate temperature can be used to tune the def
ect density n(disl), the dislocation formation mechanism is closely related
to the YBa2Cu3O7-delta nucleation and growth mechanism. We propose that di
slocations are induced as a result of merging of misaligned growth fronts d
ue to the preferential formation of precipitates in the first stages of gro
wth. Indeed, we find that we can increase the dislocation density by first
depositing Y2O3 precipitates.