Pulsed laser deposited La2-xSrxCuO4+delta thin films

Authors
Citation
Wd. Si et Xx. Xi, Pulsed laser deposited La2-xSrxCuO4+delta thin films, PHYSICA C, 341, 2000, pp. 2353-2354
Citations number
4
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA C
ISSN journal
09214534 → ACNP
Volume
341
Year of publication
2000
Part
4
Pages
2353 - 2354
Database
ISI
SICI code
0921-4534(200011)341:<2353:PLDLTF>2.0.ZU;2-K
Abstract
High quality La2-xSr2CuO4+delta thin films have been grown with different s train and oxygen content. Strain was controlled by depositing either compre ssive or tensile SrLaAlO4 buffer layer on SrTiO3 substrate. Oxygen content was controlled by whether or not using an ozone/molecular oxygen mixture du ring cooling to achieve better oxygen uptake. We found that both full oxyge nation and compressive in-plane strain are critical for the superconducting properties of the La2-xSrxCuO4+delta thin films, and perhaps the compressi ve strain makes the oxygenation much easier.