M. Salluzzo et al., A study of the growth mode of Re1+xBa2-xCu3O7-delta (Re = Nd, Y, Sm) epitaxial films deposited by physical vapour deposition., PHYSICA C, 341, 2000, pp. 2361-2362
A study of the 2D vs 3D growth in c-axis Nd1+xBa2xCu3O7-delta films and a s
tudy of the crossover between a-axis to c-axis growth in the Re1+xBa2-xCu3O
7-delta (RBCO) family is reported. We found that c-axis stoichiometric Nd1B
a2Cu3O7 films exhibit a 3D layered island-growth, possibly originated by sc
rew and half loop dislocations. On the contrary, a continuous 2D growth is
found in off-stoichiometry films, characterised by Nd excess. The amount of
a-axis in Nd1+xBa2-xCu3O7 films deposited at different temperatures has be
en carefully determined by XRD. The experimental results are interpreted in
the framework of a theoretical model of the nucleation of RBCO films. The
model provides a quantitative description and a satisfactory fit of experim
ental data from our experiment and from the Current litterature.