Thermodynamics and growth of BiSrCaCuO thin films by MOCVD

Citation
M. Nevriva et al., Thermodynamics and growth of BiSrCaCuO thin films by MOCVD, PHYSICA C, 341, 2000, pp. 2383-2384
Citations number
7
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA C
ISSN journal
09214534 → ACNP
Volume
341
Year of publication
2000
Part
4
Pages
2383 - 2384
Database
ISI
SICI code
0921-4534(200011)341:<2383:TAGOBT>2.0.ZU;2-4
Abstract
The MOCVD process of the preparation of superconducting Bi-Sr-Ca-Cu-O thin films was studied by theoretical and experimental approach. Thermodynamic a nalysis of the Bi-Sr-Ca-Cu-O-C-H-Ar system using the Gibbs energy minimizat ion method was performed to propose feasible deposition conditions for the growth of superconducting films. The calculation results are compared with the properties of thin films prepared in cold-wall rf-heated quartz reactor from metalorganic precursors.